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Provisional Data Sheet PD 9.679C
REPETITIVE AVALANCHE AND dv/dt RATED
IRHN7250 IRHN8250
N-CHANNEL
HEXFET(R) TRANSISTOR
200 Volt, 0.10, MEGA RAD HARD HEXFET
International Rectifier's MEGA RAD HARD technology HEXFET power MOSFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry. RAD HARD HEXFET transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.
MEGA RAD HARD
Product Summary
Part Number IRHN7250 IRHN8250 BVDSS 200V 200V RDS(on) 0.10 0.10 ID 26A 26A
Features:
s s s s s s s s s s s s s
Radiation Hardened up to 1 x 10 6 Rads (Si) Single Event Burnout (SEB) Hardened Single Event Gate Rupture (SEGR) Hardened Gamma Dot (Flash X-Ray) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Rating Dynamic dv/dt Rating Simple Drive Requirements Ease of Paralleling Hermetically Sealed Surface Mount Light-weight
Absolute Maximum Ratings
Parameter
I D @ VGS = 12V, TC = 25C Continuous Drain Current ID @ VGS = 12V, TC = 100C Continuous Drain Current IDM Pulsed Drain Current PD @ TC = 25C Max. Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage EAS Single Pulse Avalanche Energy I AR Avalanche Current EAR Repetitive Avalanche Energy dv/dt Peak Diode Recovery dv/dt TJ Operating Junction TSTG Storage Temperature Range Package Mounting Surface Temperature Weight 26 16 104 150 1.2 20 500 26 15 5.0 -55 to 150
Pre-Radiation
IRHN7250, IRHN8250 Units A
W W/K V mJ A mJ V/ns
oC
300 (for 5 sec.) 2.6 (typical)
g
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min.
200 -- -- -- 2.0 8.0 -- -- -- -- -- -- -- -- -- -- -- --
Typ. Max. Units
-- 0.28 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 2.0 -- -- 0.10 0.11 4.0 -- 25 250 100 -100 170 30 60 33 140 140 140 -- V V/C V S( ) A nA nC
Test Conditions
VGS = 0V, ID = 1.0 mA Reference to 25C, ID = 1.0 mA VGS = 12V, ID = 16A VGS = 12V, ID = 26A VDS = VGS, ID = 1.0 mA VDS > 15V, I DS = 16A VDS = 0.8 x Max Rating,VGS = 0V VDS = 0.8 x Max Rating VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, I D = 26A VDS = Max. Rating x 0.5 (see figures 23 and 31) VDD = 100V, ID = 26A, RG = 2.35 (see figure 22)
Measured from the Modified MOSFET drain lead, 6mm (0.25 symbol showing the in.) from package to internal inductances. center of die. Measured from the source lead, 6mm (0.25 in.) from package to source bonding pad.
IGSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance
ns
LS
Internal Source Inductance
--
4.1
--
nH
Ciss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
4700 850 210
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0 MHz (see figure 22)
Source-Drain Diode Ratings and Characteristics
Parameter
IS I SM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode)
Min. Typ. Max. Units
-- -- -- -- 26 104
Test Conditions
Modified MOSFET symbol showing the integral reverse p-n junction rectifier.
A
VSD t rr Q RR t on
Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
--
-- -- --
1.9 820 12
V ns C
Tj = 25C, IS = 26A, VGS = 0V Tj = 25C, IF = 26A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC RthJPCB Junction-to-Case Junction-to-PC board
Min. Typ. Max. Units
-- -- -- TBD 0.83 K/W --
Test Conditions
soldered to a copper-clad PC board
F-348
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IRHN7250/IRHN8250 Devices
Radiation Performance of Mega Rad Hard HEXFETs
International Rectifier Radiation Hardened HEX-FETs are tested to verify their hardness capability. The hardness assurance program at International Rectifier uses two radiation environments. Every manufacturing lot is tested in a low dose rate (total dose) environment per MlL-STD-750, test method 1019. International Rectifier has imposed a standard gate voltage of 12 volts per note 6 and figure 8a and a VDSS bias condition equal to 80% of the device rated voltage per note 7 and figure 8b. Pre- and post-radiation limits of the devices irradiated to 1 x 105 Rads (Si) are identical and are presented in Table 1, column 1, IRHN7250. Device performance limits at a post radiation level of 1 x 106 Rads (Si) are presented in Table 1, column 2, IRHN8250. The values in Table 1 will be met for either of the two low dose rate test circuits that are used. Typical delta curves showing radiation response appear in figures 1 through 5. Typical postradiation curves appear in figures 10 through 17.
Post-Radiation Characteristics
Both pre- and post-radiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. It should be noted that at a radiation level of 1 x 105 Rads (Si), no change in limits are specified in DC parameters. At a radiation level of 1 x106 Rads (Si), leakage remains low and the device is usable with no change in drive circuitry required. High dose rate testing may be done on a special request basis, using a dose rate up to 1 x 1012 Rads (Si)/Sec. Photocurrent and transient voltage waveforms are shown in figure 7, and the recommended test circuit to be used is shown in figure 9. International Rectifier radiation hardened HEXFETs have been characterized in neutron and heavy ion Single Event Effects (SEE) environments. The effects on bulk silicon of the type used by International Rectifier on RAD HARD HEXFETs are shown in figure 6. Single Event Effects characterization is shown in Table 3. IRHN8250 Test Conditions
VGS = 0V, ID = 1.0 mA VGS = VDS, I D = 1.0 mA VGS = +20V VGS = -20V VDS = 0.8 x Max Rating, VGS = 0 VGS = 12V, ID = 16A TC = 25C, IS = 26A,VGS = 0V min. 200 1.25 -- -- -- -- -- max. -- 4.5 100 -100 50 0.150 1.9 V nA A V
Table 1. Low Dose Rate
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on)1 VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance One Diode Forward Voltage
IRHN7250
min. 200 2.0 -- -- -- -- -- max. -- 4.0 100 -100 25 0.10 1.9
100K Rads (Si) 1000K Rads (Si) Units
Table 2. High Dose Rate
1011 Rads (Si)/sec 1012 Rads (Si)/sec
Parameter
VDSS IPP di/dt L1 Drain-to-Source Voltage
Min. Typ Max. Min. Typ. Max. Units Test Conditions -- -- 160 -- -- 160 V Applied drain-to-source voltage during gamma-dot -- 15 -- -- 15 -- A Peak radiation induced photo-current -- -- 160 -- -- 8.0 A/sec Rate of rise of photo-current 1.0 -- -- 20 -- -- H Circuit inductance required to limit di/dt
Table 3. Single Event Effects
Parameter
BVDSS
Typ.
200
Units
V
Ion
Ni
LET (Si) (MeV/mg/cm2)
28
Fluence (ions/cm2)
1 x 105
Range (m)
~41
VDS Bias (V)
160
VGS Bias (V)
-5
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IRHN7250/IRHN8250 Devices
Post-Radiation
VGS = 12V ID = 16A
Figure 1. - Typical Response of Gate Threshold Voltage Vs. Total Dose Exposure
Figure 2. - Typical Response of On-State Resistance Vs. Total Dose Exposure
VDS 15V ID = 16A
Figure 3. - Typical Response of Transconductance Vs. Total Dose Exposure
Figure 4. - Typical Response of Drain-to-Source Breakdown Vs. Total Dose Exposure
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IRHN7250/IRHN8250 Devices
Post-Radiation
Figure 5. - Typical Zero Gate Voltage Drain Current Vs. Total Dose Exposure
Figure 6. - Typical On-State Resistance Vs. Neutron Fluence Level
Figure 8a. - During Radiation Gate Stress of VGSS = 12V
Figure 8b. - During Radiation VDSS Stress = 80% of B VDSS Figure 7. - Typical Transient Response of Rad Hard HEXFET During 1 x1012 Rad (Si)/Sec Exposure Figure 9. - High Dose Rate (Gamma Dot) Test Circuit
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IRHN7250/IRHN8250 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; VGS = 12 V dc, VDS = 0 Vdc
Figure 10. - Typical Output Characteristics Pre-Radiation
Figure 11. - Typical Output Characteristics Post-Radiation 100K Rads (Si)
Figure 12. - Typical Output Characteristics Post-Radiation 300K Rads (Si)
Figure 13. - Typical Output Characteristics Post-Radiation 1 Mega Rads (Si)
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IRHN7250/IRHN8250 Devices
Radiation Characteristics
Note: Bias Conditions during radiation; VGS = 0 V dc, VDS = 160 Vdc
Figure 14. - Typical Output Characteristics Pre-Radiation
Figure 15. - Typical Output Characteristics Post-Radiation 100K Rads (Si)
Figure 16. - Typical Output Characteristics Post-Radiation 300K Rads (Si)
Figure 17. - Typical Output Characteristics Post-Radiation 1 Mega Rads (Si)
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Figure 18. - Typical Output Characteristics, TC = 25C
Figure 19. - Typical Output Characteristics, T C = 150C
ID = 26A
Figure 20. - Typical Transfer Characteristics
Figure 21. - Normalized On-Resistance Vs. Temperature
F-354
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IRHN7250/IRHN8250 Devices
Pre-Radiation
ID = 26A
Figure 22. - Typical Capacitance Vs. Drain-to-Source Voltage
Figure 23. - Typical Gate Charge Vs. Gate-to-Source Voltage
1000
OPERATION IN THIS AREA LIMITED BY RDS(on)
I D , Drain Current (A)
100
10us
100us
10
1ms
1
10ms TC = 25 o C TJ = 150 o C Single Pulse Figure 25. - Maximum Safe Operating Area 1 10 100 1000
V DS, Drain-to-Source Voltage (V)
Figure 24. - Typical Source-Drain Diode Forward Voltage Figure 25. - Maximum Safe Operating Area
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F-355
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IRHN7250/IRHN8250 Devices
Pre-Radiation
1 0.50
Thermal Response (Z thJC )
0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10
0.01
0.001 0.00001
t1, Rectangular Pulse Duration (sec)
Figure 26. - Maximum Effective Transient Thermal Impedance, Junction-to-Case Vs. Pulse Duration
30
25
I D , Drain Current (A)
20
15
10
5
0 25 50 75 100 125 150
T C , Case Temperature
( C)
Figure 27. - Maximum Drain Current Vs. Case Temperature
F-356
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IRHN7250/IRHN8250 Devices
Pre-Radiation
VDS VGS RG
RD
VDS 90%
+
D.U.T.
-VDD
10V
Pulse Width 1 Duty Factor 0.1
10% VGS
td(on) tr t d(off) tf
Figure 28a. - Switching Time Test Circuit
Figure 28b. - Switching Time Waveforms
15 V
V (B R )D S S tp
VD S
L
D R IV ER
RG
20V
D .U.T IA S tp 0 .0 1
+ V - DD
A
IAS
Figure 29a. - Unclamped Inductive Test Curcuit
Figure 29b. - Unclamped Inductive Waveforms
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IRHN7250/IRHN8250 Devices
Pre-Radiation
ID = 26A 26.7A
Figure 29c. - Maximum Avalanche Energy Vs. Starting Junction Temperature
Figure 30. - Peak Diode Recovery dv/dt Test Circuit
F-358
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IRHN7250/IRHN8250 Devices
Pre-Radiation
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
10 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Figure 31a. - Basic Gate Charge Waveform
Figure 31b. - Gate Charge Test Circuit
Figure 32 - Typical Time to Accumulated 1% Failure
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IRHN7250/IRHN8250 Devices
Repetitive Rating; Pulse width limited by
maximum junction temperature. (figure 26) Refer to current HEXFET reliability report. @ VDD = 50V, Starting TJ = 25C, EAS = [0.5 * L * (IL2) * [BVDSS/(BVDSS-VDD)] Peak IL = 26A, 25 RG 200 I SD 26A, di/dt 190 A/s, VDD BVDSS, TJ 150C Suggested RG = 2.35 Pulse width 300 s; Duty Cycle 2% K/W = C/W W/K = W/C
Total Dose Irradiation with VGS Bias.
+12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019. (figure 8a) Total Dose Irradiation with VDS Bias. VDS = 0.8 x rated BV DSS (pre-radiation) applied and VGS = 0 during irradiation per MlL-STD-750, method 1019. (figure 8b) This test is performed using a flash x-ray source operated in the e-beam mode (energy ~2.5 MeV), 30 nsec pulse. (figure 9) Study sponsored by NASA. Evaluation performed at Brookhaven National Labs. All Pre-Radiation and Post-Radiation test conditions are identical to facilitate direct comparison for circuit applications.

Case Outline and Dimensions - SMD-1
Notes: 1. Dimensioning and Tolerancing per ANSI Y14.5M-1982 2. Controlling Dimension: Inch 3. Dimensions are shown in millimeters (Inches) 4 Dimension includes metallization flash 5 Dimension does not include metallization flash
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WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-Chome, Toshima-ku, Tokyo Japan Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 1/97
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